Interfacial stability of an indium tin oxide thin film deposited on Si and Si0.85Ge0.15
Identifieur interne : 011C56 ( Main/Repository ); précédent : 011C55; suivant : 011C57Interfacial stability of an indium tin oxide thin film deposited on Si and Si0.85Ge0.15
Auteurs : RBID : Pascal:00-0376803Descripteurs français
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- 8115C, 7866N, 7830H, 7280C, 7361C, 8165M, 6855, 6835F, 6172T, 6180J, 6182F, 8280E, 6172C, Etude expérimentale, Silicium, Semiconducteur élémentaire, Alliage Ge Si, Matériau semiconducteur, Indium composé, Dépôt pulvérisation, Revêtement pulvérisation, Diffusion mutuelle chimique, Implantation ion, TEM, Analyse chimique RX, Spectre transformée Fourier, Spectre IR, Diffraction RX, Recuit, Diagramme phase, Oxydation, Métallisation.
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- Annealing, Chemical interdiffusion, Elemental semiconductors, Experimental study, Fourier transform spectra, Ge-Si alloys, Indium compounds, Infrared spectra, Ion implantation, Metallizing, Oxidation, Phase diagrams, Semiconductor materials, Silicon, Sputter deposition, Sputtered coatings, TEM, X-ray chemical analysis, XRD.
Abstract
The stability of the interface formed by depositing indium tin oxide (ITO) thin films on Si and Si0.85Ge0.15 substrates was investigated. Cross-sectional transmission electron microscopy combined with Fourier-transform infrared spectroscopy, energy dispersive x-ray analysis, x-ray diffraction, and capacitance-voltage measurements were used to characterize the interface immediately after rf magnetron sputter deposition as a function of annealing time in ultrahigh purity (UHP) N2 at 785°C for 10-80 min. The In-Si-O2 ternary phase equilibrium diagram was calculated to predict the possible product layer sequences. A 2-nm-thick interfacial amorphous silicon oxide, associated with ion implantation intermixing, is present in the ITO/Si as-deposited sample, while a 3-7-nm-thick amorphous oxide interlayer is observed in the ITO/Si0.85Ge0.15 sample. During annealing in UHP N2, the interlayer oxide growth rate follows the initial stage of conventional oxidation. In the ITO/Si system, experimental observations revealed a preference for the displacement reaction limited by the diffusivity of Si through the SiO2 layer, i.e., Si/SiO2/In/In2O3. This solid-state oxidation process has the potential for in situ fabrication of ITO metallized SiO2 gates in Si thin film transistor applications. On the other hand, the more complicated quaternary In-Si-Ge-O2 system reveals two distinct reaction layer morphologies, suggesting that the presence of Ge strongly influences the stability of the interfacial thermodynamics and kinetics. © 2000 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Interfacial stability of an indium tin oxide thin film deposited on Si and Si<sub>0.85</sub>Ge<sub>0.15</sub></title><author><name sortKey="Ow Yang, Cleva W" uniqKey="Ow Yang C">Cleva W. Ow Yang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Max-Planck-Institut fur Metallforschung, Seestrasse 92, 70174 Stuttgart, Germany</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Max-Planck-Institut fur Metallforschung, Seestrasse 92, 70174 Stuttgart</wicri:regionArea><wicri:noRegion>70174 Stuttgart</wicri:noRegion><wicri:noRegion>70174 Stuttgart</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Aoyama Gakuin University, College of Science and Engineering, 6-16-1 Chitosedai, Setagayaku, Tokyo, 157-8572, Japan</s1></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Aoyama Gakuin University, College of Science and Engineering, 6-16-1 Chitosedai, Setagayaku, Tokyo, 157-8572</wicri:regionArea><wicri:noRegion>157-8572</wicri:noRegion></affiliation><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Brown University, Division of Engineering, Box D, Providence, Rhode Island 02912</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Rhode Island</region></placeName><wicri:cityArea>Brown University, Division of Engineering, Box D, Providence</wicri:cityArea></affiliation></author><author><name sortKey="Shigesato, Yuzo" uniqKey="Shigesato Y">Yuzo Shigesato</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Max-Planck-Institut fur Metallforschung, Seestrasse 92, 70174 Stuttgart, Germany</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Max-Planck-Institut fur Metallforschung, Seestrasse 92, 70174 Stuttgart</wicri:regionArea><wicri:noRegion>70174 Stuttgart</wicri:noRegion><wicri:noRegion>70174 Stuttgart</wicri:noRegion></affiliation></author><author><name sortKey="Paine, David C" uniqKey="Paine D">David C. Paine</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Max-Planck-Institut fur Metallforschung, Seestrasse 92, 70174 Stuttgart, Germany</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Max-Planck-Institut fur Metallforschung, Seestrasse 92, 70174 Stuttgart</wicri:regionArea><wicri:noRegion>70174 Stuttgart</wicri:noRegion><wicri:noRegion>70174 Stuttgart</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0376803</idno><date when="2000-09-15">2000-09-15</date><idno type="stanalyst">PASCAL 00-0376803 AIP</idno><idno type="RBID">Pascal:00-0376803</idno><idno type="wicri:Area/Main/Corpus">012905</idno><idno type="wicri:Area/Main/Repository">011C56</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term><term>Chemical interdiffusion</term><term>Elemental semiconductors</term><term>Experimental study</term><term>Fourier transform spectra</term><term>Ge-Si alloys</term><term>Indium compounds</term><term>Infrared spectra</term><term>Ion implantation</term><term>Metallizing</term><term>Oxidation</term><term>Phase diagrams</term><term>Semiconductor materials</term><term>Silicon</term><term>Sputter deposition</term><term>Sputtered coatings</term><term>TEM</term><term>X-ray chemical analysis</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8115C</term><term>7866N</term><term>7830H</term><term>7280C</term><term>7361C</term><term>8165M</term><term>6855</term><term>6835F</term><term>6172T</term><term>6180J</term><term>6182F</term><term>8280E</term><term>6172C</term><term>Etude expérimentale</term><term>Silicium</term><term>Semiconducteur élémentaire</term><term>Alliage Ge Si</term><term>Matériau semiconducteur</term><term>Indium composé</term><term>Dépôt pulvérisation</term><term>Revêtement pulvérisation</term><term>Diffusion mutuelle chimique</term><term>Implantation ion</term><term>TEM</term><term>Analyse chimique RX</term><term>Spectre transformée Fourier</term><term>Spectre IR</term><term>Diffraction RX</term><term>Recuit</term><term>Diagramme phase</term><term>Oxydation</term><term>Métallisation</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The stability of the interface formed by depositing indium tin oxide (ITO) thin films on Si and Si<sub>0.85</sub>Ge<sub>0.15</sub> substrates was investigated. Cross-sectional transmission electron microscopy combined with Fourier-transform infrared spectroscopy, energy dispersive x-ray analysis, x-ray diffraction, and capacitance-voltage measurements were used to characterize the interface immediately after rf magnetron sputter deposition as a function of annealing time in ultrahigh purity (UHP) N<sub>2</sub> at 785°C for 10-80 min. The In-Si-O<sub>2</sub> ternary phase equilibrium diagram was calculated to predict the possible product layer sequences. A 2-nm-thick interfacial amorphous silicon oxide, associated with ion implantation intermixing, is present in the ITO/Si as-deposited sample, while a 3-7-nm-thick amorphous oxide interlayer is observed in the ITO/Si<sub>0.85</sub>Ge<sub>0.15</sub> sample. During annealing in UHP N<sub>2</sub>, the interlayer oxide growth rate follows the initial stage of conventional oxidation. In the ITO/Si system, experimental observations revealed a preference for the displacement reaction limited by the diffusivity of Si through the SiO<sub>2</sub> layer, i.e., Si/SiO<sub>2</sub>/In/In<sub>2</sub>O<sub>3</sub>. This solid-state oxidation process has the potential for in situ fabrication of ITO metallized SiO<sub>2</sub> gates in Si thin film transistor applications. On the other hand, the more complicated quaternary In-Si-Ge-O<sub>2</sub> system reveals two distinct reaction layer morphologies, suggesting that the presence of Ge strongly influences the stability of the interfacial thermodynamics and kinetics. © 2000 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>88</s2></fA05><fA06><s2>6</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Interfacial stability of an indium tin oxide thin film deposited on Si and Si<sub>0.85</sub>Ge<sub>0.15</sub></s1></fA08><fA11 i1="01" i2="1"><s1>OW YANG (Cleva W.)</s1></fA11><fA11 i1="02" i2="1"><s1>SHIGESATO (Yuzo)</s1></fA11><fA11 i1="03" i2="1"><s1>PAINE (David C.)</s1></fA11><fA14 i1="01"><s1>Max-Planck-Institut fur Metallforschung, Seestrasse 92, 70174 Stuttgart, Germany</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Aoyama Gakuin University, College of Science and Engineering, 6-16-1 Chitosedai, Setagayaku, Tokyo, 157-8572, Japan</s1></fA14><fA14 i1="03"><s1>Brown University, Division of Engineering, Box D, Providence, Rhode Island 02912</s1></fA14><fA20><s1>3717-3724</s1></fA20><fA21><s1>2000-09-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2000 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>00-0376803</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The stability of the interface formed by depositing indium tin oxide (ITO) thin films on Si and Si<sub>0.85</sub>Ge<sub>0.15</sub> substrates was investigated. Cross-sectional transmission electron microscopy combined with Fourier-transform infrared spectroscopy, energy dispersive x-ray analysis, x-ray diffraction, and capacitance-voltage measurements were used to characterize the interface immediately after rf magnetron sputter deposition as a function of annealing time in ultrahigh purity (UHP) N<sub>2</sub> at 785°C for 10-80 min. The In-Si-O<sub>2</sub> ternary phase equilibrium diagram was calculated to predict the possible product layer sequences. A 2-nm-thick interfacial amorphous silicon oxide, associated with ion implantation intermixing, is present in the ITO/Si as-deposited sample, while a 3-7-nm-thick amorphous oxide interlayer is observed in the ITO/Si<sub>0.85</sub>Ge<sub>0.15</sub> sample. During annealing in UHP N<sub>2</sub>, the interlayer oxide growth rate follows the initial stage of conventional oxidation. In the ITO/Si system, experimental observations revealed a preference for the displacement reaction limited by the diffusivity of Si through the SiO<sub>2</sub> layer, i.e., Si/SiO<sub>2</sub>/In/In<sub>2</sub>O<sub>3</sub>. This solid-state oxidation process has the potential for in situ fabrication of ITO metallized SiO<sub>2</sub> gates in Si thin film transistor applications. On the other hand, the more complicated quaternary In-Si-Ge-O<sub>2</sub> system reveals two distinct reaction layer morphologies, suggesting that the presence of Ge strongly influences the stability of the interfacial thermodynamics and kinetics. © 2000 American Institute of Physics.</s0> </fC01><fC02 i1="01" i2="3"><s0>001B80A15C</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H66N</s0></fC02><fC02 i1="03" i2="3"><s0>001B70H30H</s0></fC02><fC02 i1="04" i2="3"><s0>001B70B80C</s0></fC02><fC02 i1="05" i2="3"><s0>001B70C61C</s0></fC02><fC02 i1="06" i2="3"><s0>001B80A65</s0></fC02><fC02 i1="07" i2="3"><s0>001B60H55</s0></fC02><fC02 i1="08" i2="3"><s0>001B60H35F</s0></fC02><fC02 i1="09" i2="3"><s0>001B60A72T</s0></fC02><fC02 i1="10" i2="3"><s0>001B60A80J</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>8115C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7866N</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7830H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>7280C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>7361C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>8165M</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="07" i2="3" l="FRE"><s0>6855</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="08" i2="3" l="FRE"><s0>6835F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="09" i2="3" l="FRE"><s0>6172T</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="10" i2="3" l="FRE"><s0>6180J</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="11" i2="3" l="FRE"><s0>6182F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="12" i2="3" l="FRE"><s0>8280E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="13" i2="3" l="FRE"><s0>6172C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Silicium</s0><s2>NC</s2></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Silicon</s0><s2>NC</s2></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Semiconducteur élémentaire</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Elemental semiconductors</s0></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Alliage Ge Si</s0></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Ge-Si alloys</s0></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Matériau semiconducteur</s0></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Semiconductor materials</s0></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Dépôt pulvérisation</s0></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Sputter deposition</s0></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Revêtement pulvérisation</s0></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Sputtered coatings</s0></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Diffusion mutuelle chimique</s0></fC03><fC03 i1="22" i2="3" l="ENG"><s0>Chemical interdiffusion</s0></fC03><fC03 i1="23" i2="3" l="FRE"><s0>Implantation ion</s0></fC03><fC03 i1="23" i2="3" l="ENG"><s0>Ion implantation</s0></fC03><fC03 i1="24" i2="3" l="FRE"><s0>TEM</s0></fC03><fC03 i1="24" i2="3" l="ENG"><s0>TEM</s0></fC03><fC03 i1="25" i2="3" l="FRE"><s0>Analyse chimique RX</s0></fC03><fC03 i1="25" i2="3" l="ENG"><s0>X-ray chemical analysis</s0></fC03><fC03 i1="26" i2="3" l="FRE"><s0>Spectre transformée Fourier</s0></fC03><fC03 i1="26" i2="3" l="ENG"><s0>Fourier transform spectra</s0></fC03><fC03 i1="27" i2="3" l="FRE"><s0>Spectre IR</s0></fC03><fC03 i1="27" i2="3" l="ENG"><s0>Infrared spectra</s0></fC03><fC03 i1="28" i2="3" l="FRE"><s0>Diffraction RX</s0></fC03><fC03 i1="28" i2="3" l="ENG"><s0>XRD</s0></fC03><fC03 i1="29" i2="3" l="FRE"><s0>Recuit</s0></fC03><fC03 i1="29" i2="3" l="ENG"><s0>Annealing</s0></fC03><fC03 i1="30" i2="3" l="FRE"><s0>Diagramme phase</s0></fC03><fC03 i1="30" i2="3" l="ENG"><s0>Phase diagrams</s0></fC03><fC03 i1="31" i2="3" l="FRE"><s0>Oxydation</s0></fC03><fC03 i1="31" i2="3" l="ENG"><s0>Oxidation</s0></fC03><fC03 i1="32" i2="3" l="FRE"><s0>Métallisation</s0></fC03><fC03 i1="32" i2="3" l="ENG"><s0>Metallizing</s0></fC03><fN21><s1>255</s1></fN21><fN47 i1="01" i2="1"><s0>0036M000383</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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